Monte Carlo simulation of the influence of temperature and pressureon the transport of particlesin the plasma discharge for thin filmsdeposition

Abstract

this work is divided into two parts, in first part we calculate the sputtering yield of seven metals and semiconductors (Cu, Al, Ge, Nb, B, Si and Ag) using developed software called SRIM (Stopping and Range of Ions in Matter) with varied energy, then angle of incidence. In the second part we present the influence of temperature in the sputtering process of deposited layers of metals and semiconductors mentioned above The flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter temperature (300 K-450 K)