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dc.contributor.authorBOUDALI, HALIMA FARAH-
dc.contributor.authorBOUMAZA, AMINA-
dc.date.accessioned2023-10-25T08:33:01Z-
dc.date.available2023-10-25T08:33:01Z-
dc.date.issued2023-06-
dc.identifier.urihttp://dspace.univ-tiaret.dz:80/handle/123456789/13601-
dc.description.abstractThin films have revolutionized the field of electronics by enabling miniaturization and advanced electronic component production. Sputtering is a widely employed technique for fabricating these films. Enhancing sputtering and deposition processes necessitates understanding atomic energy and angular distribution. In our study, we aimed to investigate the impact of high pressure and high temperature, key factors influencing thin film formation. Additionally, we examined two gases and three materials to determine their effectiveness. To facilitate our research, we employed simulation programs such as SRIM and SIMTRA. Through these investigations, we aimed to uncover optimal conditions for producing high- quality thin filmsen_US
dc.language.isoenen_US
dc.publisherIbn Khaldoun Universityen_US
dc.subjectthin filmsen_US
dc.subjectSputtering processen_US
dc.titleEfficiency of adjusting deposition parameters on growth of thin film materials by the application of electrical dischargeen_US
dc.typeThesisen_US
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