Simulation of analytical model for I-V characteristics of GaN based High Electron Mobility Transistors

Abstract

semiconductors ' devices which are based on silicon have always been the best choice for communication purposes due to their decent physical properties but all of a sudden all this changed and wide gap semiconductors came into place to take over the market after showing better physical properties and features compared to silicon based devices which led them to quickly take the lead and become the most suitable for the future of communication. AlGaN/GaN hemts are now the best candidate for future high frequency, high temperature electronics applications thanks to its physical properties ( high critical field ) which raised them to the fame and one of the most interesting features that they posses is its high mobility as well as the two dimensional electron gas Understanding basic properties of these devices and the various factors that play a large role in the formation of 2DEG is crucial here . In our thesis we introduce AlGaN /GaN transistor and study all possible parameters that can play a large role in improving its performance by varying gate length, spacer layer and barrier layer thickness in an attempt to examine their effects on the device's performance.