GaN-based High Electron Mobility Transistors for High Frequency HF Applications

Abstract

Recently, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are able to compete the LDMOS transistors based on silicon (Si) and pHEMTs based on gallium arsenide (GaAs)on market base stations used for telecommunications (3G, 4G, WiMAX, ...). Technological advances in recent years have used to fast transistors with interesting features. Circuit design for complex systems require high integration density, this requires treating the thermal effects associated with high power dissipation and are responsible for the degradation of the performance of these systems. The work presented in this thesis focuses on the study of the thermal effect on the DC behavior of GaN HEMT technology. In this context, a physical model from a thermal coupling of a drift-diffusion model and a thermal and based on the finite element model was developed for this transistor. This model takes into account the temperature at any point of the network component. It allows the study and detailed analysis of the effect of temperature on all the parameters of the component. This model was used to examine the influence of some technological parameters that affect the performance of the transistor such as gate length, the thickness of the gate and the substrate